MGSF1P02LT1 |
RFQ for MGSF1P02LT1 Required Field |
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| Technical/Catalog Information | MGSF1P02LT1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 750mA |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 130pF @ 5V |
| Power - Max | 400mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MGSF1P02LT1 MGSF1P02LT1 MGSF1P02LT1OSCT ND MGSF1P02LT1OSCTND MGSF1P02LT1OSCT |
| Product | Manufacturers | Pack | D/C |
| MGSF1P02LT1 | - | SOT-23 | 04+ |
| Rating | Symbol | Value | Unit |
| DraintoSource Voltage | VDSS | 20 | Vdc |
| GateEmitter Voltage - Continuous | VGS | ±20 | Vdc |
| Drain Current - Continuous @ TA = 25°C Drain Current - Pulsed Drain Current (tp 3 10 ms) |
ID IDM |
750 2000 |
A |
| Total Power Dissipation @ TC = 25°C |
PD | 400 | mW |
| Operating and Storage Junction Temperature Range | TJ, Tstg | 55 to 150 | °C |
Thermal Resistance - Junction to Ambient |
RqJA |
300 | °C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
